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تسجيل مستخدم جديدSpectroscopic evidence for temperature-dependent convergence of light and heavy hole valence bands of PbQ (Q=Te, Se, S)
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We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the emph{light} hole upper valence bands (UVBs) and hitherto undetected emph{heavy} hole lower valence bands (LVBs) in these materials. An unusual temperature dependent relative movement between these bands leads to a monotonic decrease in the energy separation between their maxima with increasing temperature, which is referred as band convergence and has long been believed to be the driving factor behind extraordinary thermoelectric performances of these compounds at elevated temperatures.
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We have conducted temperature dependent Angle Resolved Photoemission Spectroscopy (ARPES) study of the electronic structure of n-, p- type PbTe, PbSe and PbS, which are pre- mier thermoelectric materials. Our ARPES measurements on them provide direct
evidence for the light hole upper valence bands (UVBs) and the so-called heavy hole lower valence bands (LVBs), and an unusual temperature dependent relative movement between their band maxima leading to a monotonic decrease in the energy separation between LVBs and UVBs with increase in temperature. This enables convergence of these valence bands and consequently, an effective increase in the valley degeneracy in PbQ at higher temperatures, which has long been speculated to be the driving factor behind their extraordinary thermoelectric performance.
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