اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدFrequency dependent polarisation switching in h-ErMnO$_3$
75
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime ferroelectric hysteresis loops as function of frequency, temperature and applied electric fields are measured revealing the theoretically predicted saturation polarisation in the order of 5 - 6 $mu$C/cm$^2$. Special emphasis is put on frequency-dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
قيم البحث
اقرأ أيضاً
Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical s
ubstitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality.
We report a study of magnetism and magnetic transitions of hexagonal ErMnO$_3$ single crystals by magnetization, specific heat and heat transport measurements. Magnetization data show that the $c$-axis magnetic field induces three magnetic transition
s at 0.8, 12 and 28 T. The specific heat shows a peak at 2.2 K, which is due to a magnetic transition of Er$^{3+}$ moments. For low-$T$ thermal conductivity ($kappa$), a clear dip-like feature appears in $kappa(H)$ isotherm at 1--1.25 T for $H parallel ab$; while in the case of $H parallel c$, a step-like increase is observed at 0.5--0.8 T. The transition fields in $kappa(H)$ are in good agreement with those obtained from magnetization, and the anomaly of $kappa$ can be understood by a spin-phonon scattering scenario. The natures of magnetic structures and corresponding field-induced transitions at low temperatures are discussed.
The ultimate control of magnetic states of matter at femtosecond (or even faster) timescales defines one of the most pursued paradigm shifts for future information technology. In this context, ultrafast laser pulses developed into extremely valuable
stimuli for the all-optical magnetisation reversal in ferrimagnetic and ferromagnetic alloys and multilayers, while this remains elusive in elementary ferromagnets. Here we demonstrate that a single laser pulse with sub-picosecond duration can lead to the reversal of the magnetisation of bulk nickel, in tandem with the expected demagnetisation. As revealed by realistic time-dependent electronic structure simulations, the central mechanism is ultrafast light-induced torques acting on the magnetisation, which are only effective if the laser pulse is circularly polarised on a plane that contains the initial orientation of the magnetisation. We map the laser pulse parameter space enabling the magnetisation switching and unveil rich intra-atomic orbital-dependent magnetisation dynamics featuring transient inter-orbital non-collinear states. Our findings open further perspectives for the efficient implementation of optically-based spintronic devices.
Ferroelectric switching in BiFeO$_3$ multiferroic thin films with intrinsic ``stripe-like and ``bubble-like polydomain configurations was studied by piezoresponse force microscopy. Using the local electric field applied by a scanning probe microscope
tip, we observe reversal of both out-of-plane and in-plane components of the polarization, with the final domain state depending on the tip sweeping direction. In ``bubble-like samples, complete control of the polarization is achieved, with in-plane polarization change mediated and stabilized by out-of-plane polarization reversal. In ``stripe-like samples the intrinsic domain structure influences polarization switching and in-plane reversal may occur without out-of-plane change. The observed switching behaviour can be well correlated with the radial and vertical components of the highly inhomogeneous electric field applied by the tip.
We measure temperature-dependent one-photon and two-photon induced photoluminescence from (CH3NH3)PbBr3 single crystals cleaved in ultrahigh vacuum. An approach is presented to extract absorption spectra from a comparison of both measurements. Cleave
d crystals exhibit broad photoluminescence spectra. We identify the direct optical band gap of 2.31 eV. Below 200 K the band gap increases with temperature, and it decreases at elevated temperature, as described by the Bose-Einstein model. An excitonic transition is found 22 meV below the band gap at temperatures <200 K. Defect emission occurs at photon energies <2.16 eV. In addition, we observe a transition at 2.25 eV (2.22 eV) in the orthorhombic (tetragonal and cubic) phase. Below 200 K, the associated exciton binding energy is also 22 meV, and the transition redshifts at higher temperature. The binding energy of the exciton related to the direct band gap, in contrast, decreases in the cubic phase. High-energy emission from free carriers is observed with higher intensity than reported in earlier studies. It disappears after exposing the crystals to air.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
