اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCarrier driven antiferromagnetism and exchange-bias in SrRuO3/CaRuO3 heterostructures
89
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Oxide heterostructures exhibit a rich variety of magnetic and transport properties which arise due to contact at an interface. This can lead to surprising effects that are very different from the bulk properties of the materials involved. We report the magnetic properties of bilayers of SrRuO3, a well known ferromagnet, and CaRuO3, which is nominally a paramagnet. We find intriguing features that are consistent with CaRuO3 developing dual magnetic character, with both a net moment as well as antiferromagnetic order. We argue the ordered SrRuO3 layer induces an undulating polarization profile in the conduction electrons of CaRuO3, by a mechanism akin to Friedel oscillations. At low temperatures, this oscillating polarization is inherited by rigid local moments within CaRuO3, leading to a robust exchange bias. We present ab initio simulations in support of this picture. Our results demonstrate a new ordering mechanism and throw light on the magnetic character of CaRuO3 .
قيم البحث
اقرأ أيضاً
Exchange bias (EB) and the training effects (TE) in an antiferromagnetically coupled La0.7Sr0.3MnO3 / SrRuO3 superlattices were studied in the temperature range 1.8 - 150 K. Strong antiferromagnetic (AFM) interlayer coupling is evidenced from AC - su
sceptibility measurements. Below 100 K, vertical magnetization shifts are present due to the two remanent states corresponding to the two ferromagnetic (FM) layers at FM and AFM coupling condition. After field cooling (FC), significant decrease in the exchange bias field (HEB) is observed when cycling the system through several consecutive hysteresis loops. Quantitative analysis for the variation of HEB vs. number of field cycles (n) indicates an excellent agreement between the theory, based on triggered relaxation phenomena, and our experimental observations. Nevertheless, the crucial fitting parameter K indicates smooth training effect upon repeated field cycling, in accordance with our observation.
We report annealing induced exchange bias in Fe-Cu-Pt based heterostructures with Cu as an intermediate layer (Fe/Cu/Pt heterostructure) and capping layer (Fe/Pt/Cu heterostructure). Exchange bias observed at room temperature (300 K) is found to be d
ependent on the annealing temperature. We obtained positive exchange bias of 120 Oe on annealing both the heterostructures at 400 oC, while on annealing these heterostructures at 500 and 600 oC a negative exchange bias of ~ -100 Oe was found. X-ray reflectivity and polarized neutron reflectivity measurements provided evolution of depth dependent structure and magnetic properties of the heterostructures on annealing at different temperatures and revealed coexistence of soft and hard (alloy) magnetic phases across the thickness of the films. Rapid and long range interdiffusion at interfaces on annealing the systems at a temperature above 400 oC resulted into formation of a ternary alloy phase. These results can be understood within the context of a very unusual interface exchange interaction at the interface of hard/soft magnetic phases, which are dependent on the annealing temperature.
Multiferroic BaMnF$_4$ powder were prepared by hydrothermal method. Hysteretic field dependent magnetization curve at 5 K confirms the weak ferromagnetism aroused from the canted antiferromagnetic spins by magnetoelectric coupling. The blocking tempe
rature of 65 K for exchange bias coincides well with the peak at 65 K in the zero-field cooled temperature-dependent magnetization curve, which has been assigned to the onset temperature of two-dimensional antiferromagnetism. An upturn kink of exchange field and coercivity with decreasing temperature was observed from 40 K to 20 K, which is consistent with the two-dimensional to three-dimensional antiferromagnetic transition at Neel temperature (~26 K). In contrast to the conventional mechanism of magnetization pinned by interfacial exchange coupling in multiphases, the exchange bias in BaMnF$_4$ is argued to be a bulk effect in single phase, due to the magnetization pinned by the polarization through magnetoelectric coupling.
CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interface
s. By combining the two bilayer structures into symmetric CoFe/FeMn($t_mathrm{FeMn}$)/CoFe trilayers, $H_{eb}^t$ and $H_{eb}^b$ of the top and bottom CoFe layers, respectively, are both enhanced. Reducing $t_mathrm{FeMn}$ of the trilayers also results in enhancements of both $H_{eb}^b$ and $H_{eb}^t$. These results evidence the propagation of exchange bias between the two CoFe/FeMn and FeMn/CoFe interfaces mediated by the FeMn antiferromagnetic order.
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the
study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
