ﻻ يوجد ملخص باللغة العربية
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The influence of the image forces is twofold: 1) they significantly enforce magneto-electric effect occurring due to the surface charges at the interface between ferroelectric and ferromagnets; 2) in combination with voltage dependent dielectric constant of the ferroelectric barrier image forces cause an additional contribution to the magneto-electric effect in magnetic tunnel junctions. This contribution can exceed the one coming from surface charges. We compare the interlayer exchange coupling voltage variation with spin transfer torque effect and show that for half-metallic electrodes the interlayer exchange coupling variation is dominant and defines the magnetic state and dynamics of magnetization in the tunnel junction.
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage
We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complimentary proces
We study interlayer exchange coupling (IEC) based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction (MTJ). This mechanism complements the known IEC based on virtual electron hopping (or spin currents). We f
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous polarization give
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of defects in the s