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We report on the superconducting properties of molybdenum nitride thin films grown by reactive DC sputtering at room temperature with a N2:Ar mixture. Thin films grown using 5 % N2 concentration display Tc = 8 K, which is gradually reduced and abruptly disappears for 40 % N2 concentration. This suppression can be associated with changes in the nitrogen stoichiometry from Mo2N to MoN. Our results provide an effective and simple path to prepare Mo2Nx thin films with tunable Tc, which is relevant for the investigation of the fundamental properties and for technological applications.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morpho
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular magnetic anisotro
We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the presence of the
Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low
In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputter