ترغب بنشر مسار تعليمي؟ اضغط هنا

Electronic and magnetic properties of the monolayer RuCl$_3$: A first-principles and Monte Carlo study

93   0   0.0 ( 0 )
 نشر من قبل Ethem Akt\u007f\\\"urk
 تاريخ النشر 2017
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Recent experiments revealed that monolayer $alpha$-RuCl$_3$ can be obtain by chemical exfoliation method and exfoliation or restacking of nanosheets can manipulate the magnetic properties of the materials. In this present paper, the electronic and magnetic properties of $alpha$-RuCl$_3$ monolayer are investigated by combining first-principles calculations and Monte Carlo simulations. From first-principles calculations, we found that the spin configuration FM corresponds to the ground state for $alpha$-RuCl$_3$, however, the other excited zigzag oriented spin configuration has energy of 5 meV/atom higher than the ground state. Energy band gap has been obtained as $3$ meV using PBE functionals. When spin-orbit coupling effect is taken into account, corresponding energy gap is determined to be as $57$ meV. We also investigate the effect of Hubbard U energy terms on the electronic band structure of $alpha$-RuCl$_3$ monolayer and revealed band gap increases approximately linear with increasing U value. Moreover, spin-spin coupling terms ($J_1$, $J_2$, $J_3$) have been obtained using first principles calculations. By benefiting from these terms, Monte Carlo simulations with single site update Metropolis algorithm have been implemented to elucidate magnetic properties of the considered system. Thermal variations of magnetization, susceptibility and also specific heat curves indicate that monolayer $alpha$-RuCl$_3$ exhibits a phase transition between ordered and disordered phases at the Curie temperature $14.21$ K. We believe that this study can be utilized to improve two-dimensional magnet materials.



قيم البحث

اقرأ أيضاً

Magnetism in lanthanum cobaltite (LCO, LaCoO$_3$) appears to be strongly dependent on strain, defects, and nanostructuring. LCO on strontium titanate (STO, SrTiO$_3$) is a ferromagnet with an interesting strain relaxation mechanism that yields a latt ice modulation. However, the driving force of the ferromagnetism is still controversial. Experiments debate between a vacancy-driven or strain-driven mechanism for the ferromagnetism of epitaxial LCO. We found that a weak lateral modulation of the superstructure is sufficient to promote ferromagnetism. We find that ferromagnetism appears under uniaxial compression and expansion. Although earlier experiments suggest that bulk LCO is nonmagnetic, we find an antiferromagnetic ground state for bulk LCO. We discuss the recent experiments which indicate a more complicated picture for bulk magnetism and a closer agreement with our calculations. Role of defects are also discussed through excited state calculations.
We report diffusion quantum Monte Carlo (DMC) and many-body $GW$ calculations of the electronic band gaps of monolayer and bulk hexagonal boron nitride (hBN). We find the monolayer band gap to be indirect. $GW$ predicts much smaller quasiparticle gap s at both the single-shot $G_0W_0$ and the partially self-consistent $GW_0$ levels. In contrast, solving the Bethe-Salpeter equation on top of the $GW_0$ calculation yields an exciton binding energy for the direct exciton at the $K$ point in close agreement with the DMC value. Vibrational renormalization of the electronic band gap is found to be significant in both the monolayer and the bulk. Taking vibrational effects into account, DMC overestimates the band gap of bulk hBN, while $GW$ theory underestimates it.
118 - V.V. Bannikov 2014
The structural, elastic, magnetic properties, as well as electronic structure and chemical bonding picture of new oxide 3d1-perovskite BaVO3, recently synthesized, were systematically investigated involving the first-principles FLAPW-GGA calculations . The obtained results are discussed in comparison with available experimental data, as well as with those obtained before for isostructural and isoelectronic SrVO3 perovskite.
First principles study of structural, elastic, and electronic properties of the cubic perovskitetype BaHfO$_3$ has been performed using the plane wave ultrasoft pseudo-potential method based on density functional theory with revised Perdew-Burke-Ernz erhof exchange-correlation functional of the generalized gradient approximation (GGA-RPBE). The calculated equilibrium lattice constant of this compound is in good agreement with the available experimental and theoretical data reported in the literatures. The independent elastic constants (emph{C}$_{11}$, emph{C}$_{12}$, and emph{C}$_{44}$), bulk modules emph{B} and its pressure derivatives $B^{prime}$, compressibility $beta$, shear modulus emph{G}, Youngs modulus emph{Y}, Poissons ratio $ u$, and Lam{e} constants ($mu, lambda$) are obtained and analyzed in comparison with the available theoretical and experimental data for both the singlecrystalline and polycrystalline BaHfO$_3$. The band structure calculations show that BaHfO$_3$ is a indirect bandgap material (R-$Gamma$ = 3.11 eV) derived basically from the occupied O 2emph{p} and unoccupied Hf 5emph{d} states, and it still awaits experimental confirmation. The density of states (total, site-projected, and emph{l}-decomposed) and the bonding charge density calculations make it clear that the covalent bonds exist between the Hf and O atoms and the ionic bonds exist between the Ba atoms and HfO$_3$ ionic groups in BaHfO$_3$. From our calculations, it is shown that BaHfO$_3$ should be promising as a candidate for synthesis and design of superhard materials due to the covalent bonding between the transition metal Hf 5emph{d} and O 2emph{p} states.
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As- and Sb- doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with the magnetic moment of 1{mu}B. In addition, the calculated formation energies also show that four types of doped systems are thermodynamic stable. These results provide a new route for the potential applications of doped SnSe monolayer in 2D photoelectronic and magnetic semiconductor devices.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا