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Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current driven spintronic devices. The absence of Joule heating as well as the reduced spin wave damping in insulating ferromagnets has been suggested to enable the implementation of efficient logic devices. After the proof of concept for a logic majority gate based on the superposition of spin waves has been successfully demonstrated, further components are required to perform complex logic operations. A key component is a switch that corresponds to a conventional magnetoresistive spin valve. Here, we report on magnetization orientation dependent spin signal detection in collinear magnetic multilayers with spin transport by magnonic spin currents. We find in Y3Fe5O12|CoO|Co tri-layers that the detected spin signal depends on the relative alignment of Y3Fe5O12 and Co. This demonstrates a spin valve behavior with an effect amplitude of 120% in our systems. We demonstrate the reliability of the effect and investigate the origin by both temperature and power dependent measurements, showing that spin rectification effects and a magnetic layer alignment dependent spin transport effect result in the measured signal.
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two ferromagnetic layers a
A range of ferroic glasses, magnetic, polar, relaxor and strain glasses, are considered together from the perspective of spin glasses. Simple mathematical modelling is shown to provide a possible conceptual unification to back similarities of experim
As well as several different kinds of periodically ordered ferroic phases, there are now recognized several different examples of ferroic glassiness, although not always described as such and in material fields of study that have mostly been develope
The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report th
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challeng