For metallic point contacts with Be and Al the magnetoquantum oscillations in the contact resistance have been investigated as a function of the applied voltage over the contact. For one set of point contacts the oscillation amplitude is found to vary nonmonotonously with the applied voltage with similarities to the point-contact spectrum of the electron-phonon interaction. The other part of the investigated point contacts shows a decrease of the oscillation amplitude with increasing bias voltage. For the understanding of the voltage dependence of the amplitude of the point-contact magnetoresistance oscillations the influence of nonequilibrium phonons generated by the ballistically injected electrons will be discussed.
We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The P
C resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)].
We obtain exact analytical expressions for the electronic transport through a multi-channel system, also with an applied magnetic field. The geometrical structure of the electrodes is found to cause a splitting of the conduction band into many subban
ds, depending on the number and the length of the chains and the conductance approaches zero when the chain number is sufficiently large, due to quantum interference. In the presence of a magnetic field a very complicated oscillatory behavior of the conductance is found with a very sensitive dependence on the number of chains and their lengths, in a remarkable distinction from the usual oscillations in two-channel Aharonov-Bohm (AB) rings. In the multi-channel system the obtained oscillation patterns and their periodicities depend on the partitioning of the magnetic flux in the areas enclosed by the electronic paths. The present study may provide a useful information for quantum dots with a special configuration.
We study transport of noninteracting fermions through a periodically driven quantum point contact (QPC) connecting two tight-binding chains. Initially, each chain is prepared in its own equilibrium state, generally with a bias in chemical potentials
and temperatures. We examine the heating rate (or, alternatively, energy increase per cycle) in the nonequilibrium time-periodic steady state established after initial transient dynamics. We find that the heating rate vanishes identically when the driving frequency exceeds the bandwidth of the chain. We first establish this fact for a particular type of QPC where the heating rate can be calculated analytically. Then we verify numerically that this nonequilibrium phase transition is present for a generic QPC. Finally, we derive this effect perturbatively in leading order for cases when the QPC Hamiltonian can be considered as a small perturbation. Strikingly, we discover that for certain QPCs the current averaged over the driving cycle also vanishes above the critical frequency, despite a persistent bias. This shows that a driven QPC can act as a frequency-controlled quantum switch.
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the m
aterial quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.
Capillary and van der Waals forces cause nanotubes to deform or even collapse under metal contacts. Using ab-initio bandstructure calculations, we find that these deformations reduce the bandgap by as much as 30%, while fully collapsed nanotubes beco
me metallic. Moreover degeneracy lifting, due to the broken axial symmetry and wavefunctions mismatch between the fully collapsed and the round portions of a CNT, leads to a three times higher contact resistance. The latter we demonstrate by contact resistance calculations within the tight-binding approach.
N.L. Bobrov
,J.A. Kokkedee
,N.N. Gribov
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(2017)
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"Influence of nonequilibrium phonons on the amplitude of magnetoquantum oscillations in the point-contact resistance"
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Nickolai Bobrov
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