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تسجيل مستخدم جديدResponse to Comment on Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic (arXiv:1607.06690)
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In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the interconnect and transistor resistance, we note that the energy to switch a capacitor and a FE is independent of the interconnect resistance value to the first order. Also device design can mitigate the parasitic energy losses. We further show the circuit simulations for a sub 10 aJ switching operation of a MESO logic device comprehending: a) Energy stored in multiferroic; b) Energy dissipation in the resistance of the interconnect, Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin to charge converter Risoc; d) Supply, ground resistance, and transistor losses. We also identify the requirements for the resistivity of the spin-orbit coupling materials and address the effect of internal resistance of the spin to charge conversion layer. We provide the material parameter space where MESO (with a fan-out of 1 and interconnect) achieves sub 10 aJ switching energy with path for scaling via ferroelectric/magnetoelectric/spin-orbit materials development.
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The comment by O. Entin-Wohlman, A. Aharony, and Y. Utsumi, on our paper S. Varela, I. Zambrano, B. Berche, V. Mujica, and E. Medina, Phys. Rev. B 101, 241410(R) (2020) makes a few points related to the validity of our model, especially in the light
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Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of
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An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached
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