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We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail using X-ray diffraction and transmission electron microscopy. The thinnest Ta underlayer is amorphous, whereas for thicker Ta layers a disoriented tetragonal beta-phase appears. Effective spin-orbit torques are calculated based on harmonic Hall voltage measurements performed in a temperature range between 15 and 300 K. To account for the temperature dependence of damping-like and field-like torques, we extend the spin diffusion model by including an additional contribution from the Ta/CoFeB interface. Based on this approach, the temperature dependence of the spin Hall angle in the Ta underlayer and at Ta/CoFeB interface are determined separately. The results indicate an almost temperature-independent spin Hall angle of theta_SH-N = -0.2 in Ta and a strongly temperature-dependent theta_SH-I for the intermixed Ta/CoFeB interface.
Spin current generated by spin Hall effect in the heavy metal would diffuse up and down to adjacent ferromagnetic layers and exert torque on their magnetization, called spin-orbit torque. Antiferromagnetically coupled trilayers, namely the so-called
The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Neel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this stu
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission e
Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irr
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the charge-to-spin