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Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.
The characteristics of a MeV ion source driven by superintense, ultrashort laser pulses with circular polarization are studied by means of particle-in-cell simulations. Predicted features include high efficiency, large ion density, low divergence and
We present experimental studies on ion acceleration from ultra-thin diamond-like carbon (DLC) foils irradiated by ultra-high contrast laser pulses of energy 0.7 J focussed to peak intensities of 5*10^{19} W/cm^2. A reduction in electron heating is ob
Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a paradigm shift in magnetic nanodevices. Magnetization control of ferro
The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet material
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of