ترغب بنشر مسار تعليمي؟ اضغط هنا

Relaxation and coherent oscillations in the spin dynamics of II-VI diluted magnetic quantum wells

122   0   0.0 ( 0 )
 نشر من قبل Pablo I. Tamborenea
 تاريخ النشر 2015
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling in bulk and quantum wells can compete resulting in qualitatively new dynamics when they act simultaneously. We concentrate on Hg$_{1-x-y}$Mn$_x$Cd$_y$Te quantum wells, which have a highly tunable Rashba spin-orbit coupling. Our calculations use a recently developed formalism which incorporates electronic correlations originating from the exchange $sd$-coupling. We find that the dependence of electronic spin oscillations on the excess energy changes qualitatively depending on whether or not the spin-orbit interaction dominates or is of comparable strength with the sd interaction.



قيم البحث

اقرأ أيضاً

The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.
We report on the dynamics of optically induced nuclear spin polarization in individual CdTe/ZnTe quantum dots loaded with one electron by modulation doping. The fine structure of the hot trion (charged exciton $X^-$ with an electron in the $P$-shell) is identified in photoluminescence excitation spectra. A negative polarisation rate of the photoluminescence, optical pumping of the resident electron and the built-up of dynamic nuclear spin polarisation (DNSP) are observed in time-resolved optical pumping experiments when the quantum dot is excited at higher energy than the hot trion triplet state. The time and magnetic field dependence of the polarisation rate of the $X^-$ emission allows to probe the dynamics of formation of the DNSP in the optical pumping regime. We demonstrate using time-resolved measurements that the creation of a DNSP at B=0T efficiently prevents longitudinal spin relaxation of the electron caused by fluctuations of the nuclear spin bath. The DNSP is built in the microsecond range at high excitation intensity. A relaxation time of the DNSP in about 10 microseconds is observed at $B=0T$ and significantly increases under a magnetic field of a few milli-Tesla. We discuss mechanisms responsible for the fast initialisation and relaxation of the diluted nuclear spins in this system.
Magnetically doped semiconductors are well known for their giant Zeeman splittings which can reach several meV even in relatively small external magnetic fields. After preparing a nonequilibrium exciton distribution via optical excitation, the spin d ynamics in diluted magnetic semiconductor quantum wells is typically governed by spin-flip scattering processes due to the exciton-impurity exchange interaction. Our theoretical calculations show that the giant Zeeman splitting in these materials in combination with the influence of longitudinal acoustic phonons lead to a quantum ratchet-type dynamics, resulting in an almost complete reversal of the carrier spin polarization at very low temperatures. Furthermore, we find that the predictions of a much simpler rate-equation approach qualitatively agree with a more advanced and numerically demanding quantum kinetic description of the spin dynamics for a wide range of temperatures, although quantitative difference are noticeable.
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly polarized lig ht and detected by time-resolved Kerr rotation technique. In the asymmetric structure, where a {delta}-doped layer on one side of the QW produces the Rashba contribution to the conduction-band spin-orbit splitting, the lifetime of electron spins aligned along the growth axis exhibits an anomalous dependence on B in the range 0<B<0.5 T; this results from the interplay between the Dresselhaus and Rashba effective fields which are perpendicular to each other. For larger magnetic fields, the spin lifetime increases, which is the consequence of the cyclotron motion of the electrons and is also observed in (001)-grown quantum wells. The experimental results are in agreement with the calculation of the spin lifetimes in (110)- grown asymmetric quantum wells described by the point group Cs where the growth direction is not the principal axis of the spin-relaxation-rate tensor.
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The suppression has been attributed to the compensation of the intrinsic SOI associated by the bulk inversion asymmetry (BIA) of the GaAs lattice by a structural induced asymmetry (SIA) SOI term induced by an electric field. We provide direct experimental evidence for this mechanism by demonstrating the transition between the BIA-dominated to a SIA-dominated regime via photoluminescence measurements carried out over a wide range of applied fields. Spin lifetimes exceeding 100~ns are obtained near the compensating electric field, thus making GaAs (111) QWs excellent candidates for the electrical storage and manipulation of spins.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا