اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدImproved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
90
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We investigate the influence of modified growth conditions during the spontaneous formation of GaN nanowires on Si(111) in plasma-assisted molecular beam epitaxy. We find that a two-step growth approach, where the substrate temperature is increased during the nucleation stage, is an efficient method to gain control over the area coverage, average diameter, and coalescence degree of GaN nanowire ensembles. Furthermore, we also demonstrate that the growth conditions employed during the incubation time that precedes nanowire nucleation do not influence the properties of the final nanowire ensemble. Therefore, when growing GaN nanowires at elevated temperatures or with low Ga/N ratios, the total growth time can be reduced significantly by using more favorable growth conditions for nanowire nucleation during the incubation time.
قيم البحث
اقرأ أيضاً
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display s
harp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single c
rystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.
RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane orientati
on instead of hexagonal orientation. For the first time, cubic (111) twinned patterns in ScN are observed by in-situ electron diffraction during epitaxy, and the twin domains in ScN are detected by electron backscattered diffraction, and further corroborated with X-ray diffraction. The epitaxial ScN films display very smooth, sub nanometer surface roughness at a growth temperature of 750C. Temperature-dependent Hall-effect measurements indicate a constant high n-type carrier concentration of ~1x1020/cm3 and electron mobilities of ~ 20 cm2/Vs.
Recently theorized hybrid II-IV-N{_2} / III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few e
pitaxial studies of II-IV-N{_2} materials. In this work, we present heteroepitaxial ZnGeN{_2} grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN{_2} crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 {degree}C on AlN to 500 {degree}C on GaN buffers. Structural characterization reveals well crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20 nm - 25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 {AA} {pm} 0.004 {AA} and c = 5.215 {AA} {pm} 0.005 {AA} determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step towards the development of hybrid ZnGeN{_2}-GaN integrated devices.
In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the shell growth
of GaN around GaN template NWs under the boundary condition that Ga and N do not impinge on a given sidewall facet at the same time. Our experiments with different V/III ratios and substrate temperatures show that obtaining shells with homogeneous thickness along the whole NW length is not straightforward. Analyzing in detail the shell morphology with and without substrate rotation, we find that the different azimuthal angles of the sources have a major impact on the Ga adatom kinetics and the final shell morphology. On the basis of these experimental results, we develop a diffusion model which takes into account different NW facets and the substrate. The model allows to describe well the experimental shell profiles and predicts that homogeneous shell growth can be achieved if the Ga and N source are arranged next to each other or for very high rotation speeds. Moreover, the modeling reveals that the growth on a given side facet can be categorized within one rotation in four different phases: the Ga wetting phase, the metal-rich growth phase, the N-rich growth phase, and the dissociation phase. The striking difference to growth processes on planar samples is that, in our case, diffusion takes place between different regions, i.e. the sidewall vs. the top facet and substrate, out of which on one N impinges not continuously, resulting in complex gradients in chemical potential that are modulated in time by substrate rotation. The comprehensiveness of our model provides a deep understanding of diffusion processes and the resulting adatom concentration, and could be applied to other 3D structures and material systems
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
