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We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.
We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sa
Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The appar
The graphene islands, formed as different sizes, are crucial for the final quality of the formed graphene during the CVD growth either as the nucleation seeds or as the build blocks for larger graphene domains. Extensive efforts had been devoted to t
We study the magnetic properties of nanometer-sized graphene structures with triangular and hexagonal shapes terminated by zig-zag edges. We discuss how the shape of the island, the imbalance in the number of atoms belonging to the two graphene subla
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport