ترغب بنشر مسار تعليمي؟ اضغط هنا

(Ga,Mn)As under pressure: a first-principles investigation

136   0   0.0 ( 0 )
 نشر من قبل N. Gonzalez Szwacki
 تاريخ النشر 2015
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25%$ and $12.5%$ under pressures ranging from 0 to 15 GPa. In agreement with photoemission experiments at ambient pressure, we find for $x=6.25%$ that non-hybridized Mn-3$d$ levels and Mn-induced states reside about 5 and 0.4 eV below the Fermi energy, respectively. For elevated pressures, the Mn-3$d$ levels, Mn-induced states, and the Fermi level shift towards higher energies, however, the position of the Mn-induced states relative to the Fermi energy remains constant due to hybridization of the Mn-3$d$ levels with the valence As-4$p$ orbitals. We also evaluate, employing Monte Carlo simulations, the Curie temperature ($T_{{rm C}}$). At zero pressure, we obtain $T_{{rm C}}=181$K, whereas the pressure-induced changes in $T_{{rm C}}$ are d$T_{{rm C}}$/d$p=+4.3$K/GPa for $x=12.5%$ and an estimated value of d$T_{{rm C}}$/d$papprox+2.2$K/GPa for $x=6.25%$ under pressures up to 6 GPa. The determined values of d$T_{{rm C}}$/d$p$ compare favorably with d$T_{{rm C}}$/d$p=+$(2-3) K/GPa at $pleq1.2$GPa found experimentally and estimated within the $p$-$d$ Zener model for Ga$_{0.93}$Mn$_{0.07}$As in the regime where hole localization effects are of minor importance [M. Gryglas-Borysiewicz $et$ $al$., Phys. Rev. B ${bf 82}$, 153204 (2010)].



قيم البحث

اقرأ أيضاً

In this article, we report emergence of topological phase in XMR material TmSb under hydrostatic pressure using first principles calculations. We find that TmSb, a topologically trivial semimetal, undergoes a topological phase transition with band in version at X point without breaking any symmetry under a hydrostatic pressure of 12 GPa. At 15 GPa, it again becomes topologically trivial with band inversion at $Gamma$ as well as X point. We find that the pressures corresponding to the topological phase transitions are far below the pressure corresponding to structural phase transition at 25.5 GPa. The reentrant behaviour of topological quantum phase with hydrostatic pressure would help in finding a correlation between topology and XMR effect through experiments.
NMR is the technique of election to probe the local properties of materials. Herein we present the results of density functional theory (DFT) textit{ab initio} calculations of the NMR parameters for fluorapatite (FAp), a calcium orthophosphate minera l belonging to the apatite family, by using the GIPAW method [Pickard and Mauri, 2001]. Understanding the local effects of pressure on apatites is particularly relevant because of their important role in many solid state and biomedical applications. Apatites are open structures, which can undergo complex anisotropic deformations, and the response of NMR can elucidate the microscopic changes induced by an applied pressure. The computed NMR parameters proved to be in good agreement with the available experimental data. The structural evaluation of the material behavior under hydrostatic pressure (from --5 to +100 kbar) indicated a shrinkage of the diameter of the apatitic channel, and a strong correlation between NMR shielding and pressure, proving the sensitivity of this technique to even small changes in the chemical environment around the nuclei. This theoretical approach allows the exploration of all the different nuclei composing the material, thus providing a very useful guidance in the interpretation of experimental results, particularly valuable for the more challenging nuclei such as $^{43}$Ca and $^{17}$O.
This article reports the study of SnO by using the first-principles pseudopotential plane-wave method within the generalized gradient approximation (GGA). We have calculated the structural, elastic, electronic and optical of SnO under high pressure. The elastic properties such as the elastic constants Cij bulk modulus, shear modulus, Young modulus, anisotropic factor, Pugh ratio, Poisson ratio are calculated and analyzed. Mechanical stability of SnO at all pressure are confirmed by using Born stability criteria in terms of elastic constants and are associated with ductile behaviour based on G/B ratios. It is also found that SnO exhibits very high anisotropy. The energy band structure and density of states are also calculated and analyzed. The results show the semiconducting and metallic properties at 0 (zero) and high pressure, respectively. Furthermore, the optical properties such as dielectric function, refractive index, photoconductivity, absorption coefficients, loss function and reflectivity are also calculated. All the results are compared with those of the SnO where available but most of the results at high pressure are not compared due to unavailability of the results.
We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP o r (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn)(As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا