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Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.
We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical f
Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus crucial metr
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devi
In this work we describe different types of photonic structures that allow tunability of the photonic band gap upon the application of external stimuli, as the electric or magnetic field. We review and compare two porous 1D photonic crystals: in the