ﻻ يوجد ملخص باللغة العربية
We numerically investigate the surface states of a strong topological insulator in the presence of strong electron-electron interactions. We choose a spherical topological insulator geometry to make the surface amenable to a finite size analysis. The single-particle problem maps to that of Landau orbitals on the sphere with a magnetic monopole at the center that has unit strength and opposite sign for electrons with opposite spin. Assuming density-density contact interactions, we find superconducting and anomalous (quantum) Hall phases for attractive and repulsive interactions, respectively, as well as chiral fermion and chiral Majorana fermion boundary modes between different phases. Our setup is preeminently adapted to the search for topologically ordered surface terminations that could be microscopically stabilized by tailored surface interaction profiles.
The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and Bi2-xSbxTe2S
We study the surface of a three-dimensional spin chiral $mathrm{Z}_2$ topological insulator (class CII), demonstrating the possibility of its localization. This arises through an interplay of interaction and statistically-symmetric disorder, that con
The surface states of 3D topological insulators can exhibit Fermi surfaces of arbitrary area when the chemical potential is tuned away from the Dirac points. We focus on topological Kondo insulators and show that the surface states can acquire a fini
We construct the symmetric-gapped surface states of a fractional topological insulator with electromagnetic $theta$-angle $theta_{em} = frac{pi}{3}$ and a discrete $mathbb{Z}_3$ gauge field. They are the proper generalizations of the T-pfaffian state
Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should