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We develop a gauge-independent perturbation theory for the grand potential of itinerant electrons in two-dimensional tight-binding models in the presence of a perpendicular magnetic field. At first order in the field, we recover the result of the so-called {it modern theory of orbital magnetization} and, at second order, deduce a new general formula for the orbital susceptibility. In the special case of two coupled bands, we relate the susceptibility to geometrical quantities such as the Berry curvature. Our results are applied to several two-band -- either gapless or gapped -- systems. We point out some surprising features in the orbital susceptibility -- such as in-gap diamagnetism or parabolic band edge paramagnetism -- coming from interband coupling. From that we draw general conclusions on the orbital magnetism of itinerant electrons in multi-band tight-binding models.
We study orbital magnetism in a three-dimensional (3D) quantum dot with a parabolic confining potential. We calculate the free energy of the system as a function of the magnetic field and the temperature. By this, we show that the temperature-field p
The magnetic properties of the van der Waals magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are investigated by magneto-transport measurements. We evidence that the relative strength of the inter-layer exchange coupling J to the un
The orbital susceptibility for graphene is calculated exactly up to the first order with respect to the overlap integrals between neighboring atomic orbitals. The general and rigorous theory of orbital susceptibility developed in the preceding paper
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moir{e} superlattice. Such superlattices are known to host bulk valley currents at tiny angles ($alp
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dep