اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدFerromagnetism, insulator-metal transition and magnetotransport in Pr0.58Ca0.42MnO3 films: role of microstructural perturbations
209
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Magnetic and magnetotransport properties of oriented polycrystalline Pr0.58Ca0.42MnO3 thin films prepared in flowing oxygen and air ambient has been investigated. The magnetic ground state of both the films is a frozen cluster glass. In the air annealed film charge order (CO) is quenched and ferromagnetic (FM) transition, which appears at TC=148 K is followed by antiferromagnetic (AFM) transition at TN=104 K. This film shows self-field hysteretic insulator-metal transition (IMT) at TIMC=89 K and TIMW=148 K in the cooling and warming cycle, respectively. Application of magnetic field (H) gradually enhances TIMC and TIMW, reduces the thermoresistive hysteresis and TIM diminishes. In contrast, the film annealed in flowing oxygen shows a CO transition, which is followed by FM and AFM transitions. This film shows appreciably smaller magnetic moment and does not show IMT upto H=20 kOe. As H is increased to H=30 kOe, IMT having strong thermoresistive hysteresis and sharp resistivity jumps appears in the cooling and warming cycles. As H increases to higher values the thermoresistive hysteresis is reduced, resistivity jumps are observed to disappear and TIM decreases. In the lower temperature regime the resistivity first decreases slowly with H and then shows sharp drop. The virgin cycle is not recoverable in subsequent cycles. The decrement far more pronounced in the oxygen annealed film and occurs at much higher H suggesting that the frozen cluster glass state is more robust in this film. The microstructural analysis of the two set of films shows CO quenching, FM transition and self-field IMT in air annealed film is caused by higher density of microstructural disorder and lattice defects. The difference in growth ambience of the two films could give rise to such microstructural perturbations.
قيم البحث
اقرأ أيضاً
We present a detailed study of the emergence of bulk ferromagnetism in low carrier density samples of undoped indium tin oxide (ITO). We used annealing to increase the density of oxygen vacancies and change sample morphology without introducing impur
ities through the metal insulator transition (MIT). We utilized a novel and highly sensitive Corbino-disk torque magnetometry technique to simultaneously measure the thermodynamic and transport effects of magnetism on the same sample after successive annealing. With increased sample granularity, carrier density increased, the sample became more metallic, and ferromagnetism appeared as resistance approached the MIT. Ferromagnetism was observed through the detection of magnetization hysteresis, anomalous Hall effect (AHE), and hysteretic magnetoresistance. A sign change of the AHE as the MIT is approached may elucidate the interplay between the impurity band and the conduction band in the weakly insulating side of the MIT.
We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin films on vari
ous substrates (SrTiO3 (001), (LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)). We observed systematic variation of underlying substrate dependent metal-to-insulator transition temperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K on LaAlO3) in resistivity. Resistivity in the metallic region follows a T3/2 power law; whereas insulating nature at low T is due to the localization effect. Magnetoresistance (MR) measurement of SIRO on SrTiO3 (001) shows negative MR upto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 and positive MR proportional to B2; consistent with the localized-to-normal transport crossover dynamics. Furthermore, observed spin glass like behavior of SIRO on SrTiO3 (001) in the localized regime, validates the hypothesis that (Anderson) localization favors glassy ordering. These remarkable features provide a promising approach for future applications and of fundamental interest in oxide thin films.
Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the films thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediat
e regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.
Insulator to metal (IMT) transition (T$_t$ $sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic applications.
Here we report on effects of the W and the Tb doping on the IMT and associated structural, electronic structure and optical properties of the VO2 thin film. Our results show that the W doping significantly lowers IMT temperature ($sim$ 292 K to $sim$ 247 K for 1.3% W to 3.7% W) by stabilizing the metallic rutile, $it{R}$, phase while Tb doping does not alter the IMT temperature much and retains the insulating monoclinic, $it{M1}$, phase at room temperature. It is observed that the W doping albeit significantly reduces the IR switching temperature but is detrimental to the solar modulation ability, contrary to the Tb doping effects where higher IR switching temperature and solar modulation ability is observed. The IMT behavior, electrical conductivity and IR switching behavior in the W and the Tb doped thin films are found to be directly associated with the spectral changes in the V 3$it{d_{|}}$ states.
Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in the bulk.
Here we report a deviation of chemical composition and distortion of lattice structure existing in the initial 3 unit cells of SrVO3 films grown on SrTiO3 (001) from its bulk form, which shows a direct correlation to the thickness-dependent MIT. In-situ photoemission and scanning tunneling spectroscopy indicate a MIT at the critical thickness of ~3 unit cell (u.c.), which coincides with the formation of a (root2Xroot2)R45 surface reconstruction. However, atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy show depletion of Sr, change of V valence, thus implying the existence of a significant amount of oxygen vacancies in the 3 u.c. of SrVO3 near the interface. Transport and magneto-transport measurements further reveal that disorder, rather than electron correlations, is likely to be the main cause for the MIT in the SrVO3 ultrathin films.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
