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We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4~K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250~micron. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is $>$~0.5~pW, corresponding to noise equivalent powers $>$~3$times 10^{-17}$ W/$sqrt{mathrm{Hz}}$. This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths.
To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs, with an alu
Microwave Kinetic Inductance Detectors (MKIDs) have shown great potential for sub-mm instrumentation because of the high scalability of the technology. Here we demonstrate for the first time in the sub-mm band (0.1...2 mm) a photon noise limited perf
We report photon-noise limited performance of horn-coupled, aluminum lumped-element kinetic inductance detectors at millimeter wavelengths. The detectors are illuminated by a millimeter-wave source that uses an active multiplier chain to produce radi
We demonstrate photon noise limited performance in both phase and amplitude readout in microwave kinetic inductance detectors (MKIDs) consisting of NbTiN and Al, down to 100 fW of optical power. We simulate the far field beam pattern of the lens-ante
Microwave Kinetic Inductance Detectors (MKIDs) have great potential for large very sensitive detector arrays for use in, for example, sub-mm imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency doma