ﻻ يوجد ملخص باللغة العربية
We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band structure calculations. We find that both the anomalous Hall ($sigma_{xy}^A$) and Nernst ($alpha_{xy}^A$) conductivities can be related to the spin Hall conductivity ($sigma_{xy}^S$) and band exchange-splitting ($Delta_{ex}$) by relations $sigma_{xy}^A =Delta_{ex}frac{e}{hbar}sigma_{xy}^S(E_F)$ and $alpha_{xy}^A = -frac{pi^2}{3}frac{k_B^2TDelta_{ex}}{hbar}sigma_{xy}^s(mu)$, respectively. In particular, these relations would predict that the $sigma_{xy}^A$ in the magnetized Pt (Pd) would be positive (negative) since the $sigma_{xy}^S(E_F)$ is positive (negative). Furthermore, both $sigma_{xy}^A$ and $alpha_{xy}^A$ are approximately proportional to the induced spin magnetic moment ($m_s$) because the $Delta_{ex}$ is a linear function of $m_s$. Using the reported $m_s$ in the magnetized Pt and Pd, we predict that the intrinsic anomalous Nernst conductivity (ANC) in the magnetic platinum and palladium would be gigantic, being up to ten times larger than, e.g., iron, while the intrinsic anomalous Hall conductivity (AHC) would also be significant.
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transi
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{rm u}$) and low saturation magnetization ($M_{rm s}$). We experimentally and theor
Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling behavior o
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic struct
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this wo