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We study the transport of charge carriers through finite graphene structures. The use of numerical exact kernel polynomial and Green function techniques allows us to treat actual sized samples beyond the Dirac-cone approximation. Particularly we investigate disordered nanoribbons, normal-conductor/graphene interfaces and normal-conductor/graphene/normal-conductor junctions with a focus on the behavior of the local density of states, single-particle spectral function, optical conductivity and conductance. We demonstrate that the contacts and bulk disorder will have a major impact on the electronic properties of graphene-based devices.
Metallic atomic junctions pose the ultimate limit to the scaling of electrical contacts. They serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects occurring in one-dimensional systems. C
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obt
We investigate the electron transport through a graphene p-n junction under a perpendicular magnetic field. By using Landauar-Buttiker formalism combining with the non-equilibrium Green function method, the conductance is studied for the clean and di
We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $text
Chemically synthesized cove-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains ali