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We study the effect of external noise on resistive switching. Experimental results on a manganite sample are presented showing that there is an optimal noise amplitude that maximizes the contrast between high and low resistive states. By means of numerical simulations, we study the causes underlying the observed behavior. We find that experimental results can be related to general characteristics of the equations governing the system dynamics.
We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio depen
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macro
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory elements.
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of
Thermally-activated magnetization dynamics of small nanoparticles subject to microwave (AC) external fields is studied. It is shown that, under sufficiently strong microwave excitations, chaotic magnetization dynamics may occur close to saddle-type h