اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدOptical addressing of an individual erbium ion in silicon
73
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies.
قيم البحث
اقرأ أيضاً
We demonstrate fluorescence microscopy of individual fermionic potassium atoms in a 527-nm-period optical lattice. Using electromagnetically induced transparency (EIT) cooling on the 770.1-nm D$_1$ transition of $^{40}$K, we find that atoms remain at
individual sites of a 0.3-mK-deep lattice, with a $1/e$ pinning lifetime of $67(9),rm{s}$, while scattering $sim 10^3$ photons per second. The plane to be imaged is isolated using microwave spectroscopy in a magnetic field gradient, and can be chosen at any depth within the three-dimensional lattice. With a similar protocol, we also demonstrate patterned selection within a single lattice plane. High resolution images are acquired using a microscope objective with 0.8 numerical aperture, from which we determine the occupation of lattice sites in the imaging plane with 94(2)% fidelity per atom. Imaging with single-atom sensitivity and addressing with single-site accuracy are key steps towards the search for unconventional superfluidity of fermions in optical lattices, the initialization and characterization of transport and non-equilibrium dynamics, and the observation of magnetic domains.
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to includ
e different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for ra
dical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much remains unkno
wn. Here, we utilize single shot charge state readout of an individual nitrogen-vacancy (NV) center to probe charge dynamics of the surrounding defects in diamond. We show that the NV center charge state can be converted through the capture of holes produced by optical illumination of defects many microns away. With this method, we study the optical charge conversion of silicon-vacancy (SiV) centers and provide evidence that the dark state of the SiV center under optical illumination is SiV2-. These measurements illustrate that charge carrier generation, transport, and capture are important considerations in the design and implementation of quantum devices with color centers, and provide a novel way to probe and control charge dynamics in diamond.
We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical
spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
