ﻻ يوجد ملخص باللغة العربية
Anisotropic magnetoresistance and negative magnetoresistance for in-plane fields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-doped SrTiO3 heterostructure. Both effects are exceptionally strong in LaAlO3 /SrTiO3 . We analyze their temperature, magnetic field and gate voltage dependencies and find them to arise from a Rashba type spin-orbit coupling with magnetic scatterers that have two contributions to their potential: spin exchange and Coulomb interaction. Atomic spin-orbit coupling is sufficient to explain the small effects observed in Nb-doped SrTiO3 . These results clarify contradicting transport interpretations in SrTiO3 -based heterostructures.
Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectif
We present a simple model that we believe captures the key aspects of the competition between superconducting and insulating states in twisted bilayer graphene. Within this model, the superconducting phase is primary, and arises at generic fillings,
Using SrRuO3-based thin film heterostructures, we aim to resolve the two debated interpretations that distinguish between the genuine Topological Hall Effect (THE) and the artefactual humps produced from overlapping double Karplus-Luttinger Anomalous
Two-dimensional electron systems found at the interface of SrTiO3-based oxide heterostructures often display anisotropic electric transport whose origin is currently under debate. To characterize transport along specific crystallographic directions,
Despite its simple structure and low degree of electronic correlation, SrTiO$_3$ (STO) features collective phenomena linked to charge transport and, ultimately, superconductivity, that are not yet fully explained. Thus, a better insight in the nature