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We present a model for the effect of stress on thin amorphous films that develop atop ion-irradiated silicon, based on the mechanism of ion-induced anisotropic plastic flow. Using only parameters directly measured or known to high accuracy, the model exhibits remarkably good agreement with the wavelengths of experimentally-observed patterns, and agrees qualitatively with limited data on ripple propagation speed. The predictions of the model are discussed in the context of other mechanisms recently theorized to explain the wavelengths, including extensive comparison with an alternate model of stress.
To study the effect of stress within the thin amorphous film generated atop Si irradiated by Ar+, we model the film as a viscoelastic medium into which the ion beam continually injects biaxial compressive stress. We find that at normal incidence, the
During the ion bombardment of targets containing multiple component species, highly-ordered arrays of nanostructures are sometimes observed. Models incorporating coupled partial differential equations, describing both morphological and chemical evolu
Using an analogy to the classical Stefan problem, we construct evolution equations for the fluid pore pressure on both sides of a propagating stress-induced damage front. Closed form expressions are derived for the position of the damage front as a f
The speed of growth for a particular stochastic growth model introduced by Borodin and Ferrari in [Comm. Math. Phys. 325 (2014), 603-684], which belongs to the KPZ anisotropic universality class, was computed using multi-time correlations. The model
We study transport properties of a Chalker-Coddington type model in the plane which presents asymptotically pure anti-clockwise rotation on the left and clockwise rotation on the right. We prove delocalisation in the sense that the absolutely continu