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Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications.
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluat
Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of
Several challenges in designing an operational Skyrmion racetrack memory are well-known. Among those challenges, a few contradictions can be identified if researchers were to rely only on metallic materials. Hence, expanding the exploration on Skyrmi
We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a cert
We performed comparable polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of