اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDirect measurement of plasmon propagation lengths on lithographically defined metallic waveguides on GaAs
146
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We present optical investigations of rectangular surface plasmon polariton waveguides lithographically defined on GaAs substrates. The plasmon propagation length is directly determined using a confocal microscope, with independent polarization control in both excitation and detection channels. Surface plasmon polaritons are launched along the waveguide using a lithographically defined defect at one end. At the remote end of the waveguide they scatter into the far-field, where they are imaged using a CCD camera. By monitoring the length dependence of the intensity of scattered light from the waveguide end, we directly extract the propagation length, obtaining values ranging from LSPP = 10-40 {mu}m depending on the waveguide width (w=2-5 {mu}m) and excitation wavelength (760-920 nm). Results are in good accord with theoretical expectations demonstrating the high quality of the lithographically defined structures. The results obtained are of strong relevance for the development of future semiconductor based integrated plasmonic technologies.
قيم البحث
اقرأ أيضاً
We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/h
eavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.
As an analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has been realized both in plasmonic metamaterial and waveguide structures. Via near-field coupling within unit cells, PIT with broadband could be pro
duced by plasmonic metamaterials, which, however, has not been realized in on-chip plasmonic waveguide structures. Here, we introduce broadband PIT based on a plasmonic metal-insulator-metal (MIM) waveguide system. Utilizing the direct coupling structure, PIT emerges based on an easy-fabricated structure without gap. By tuning coupling distance, the transparent window can be continuously tuned from narrow- to broadband. Such device is promising for on-chip applications on sensing, filtering and slow light over a broad frequency range.
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense non
linear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $mu$m pump is converted to a 1.0 $mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{circ}$C with a slope of 0.24 nm/$^{circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.
We propose a new type of reflective polarizer based on polarization-dependent coupling to surface-plasmon polaritons (SPPs) from free space. This inexpensive polarizer is relatively narrowband but features an extinction ratio of up to 1000 with effic
iency of up to 95% for the desired polarization (numbers from a calculation), and thus can be stacked to achieve extinction ratios of 106 or more. As a proof of concept, we experimentally realized a polarizer based on nanoporous aluminum oxide that operates around a wavelength of 10.6 um, corresponding to the output of a CO2 laser, using aluminum anodization, a low-cost electrochemical process.
We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as
a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20 dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots, towards the realization of scalable quantum photonic integrated circuits.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
