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The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.
Basal plane resistivity of expanded graphite was studied under simultaneous influence of hydrostatic pressure up to 1.8 GPa and magnetic field 0.8 T in the 77-300 K temperature region. Magnetic field induces negative magnetoresistance in the sample w
Only several compounds bearing Ag(II) cation and other transition metal cation have been known. Herein, we predict stability and crystal structures of hypothetical ternary silver(II) fluorides with copper, nickel and cobalt in 1:1 stoichiometry at pr
Boron carbide is a ceramic material with unique properties widely used in numerous, including armor, applications. Its mechanical properties, mechanism of compression, and limits of stability are of both scientific and practical value. Here, we repor
Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in bulk, crystalline materials like Silicon, is principally a change in th
We report ab initio calculations of the melting curve and Hugoniot of molybdenum for the pressure range 0-400 GPa, using density functional theory (DFT) in the projector augmented wave (PAW) implementation. We use the ``reference coexistence techniqu