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تسجيل مستخدم جديدFabrication of superconducting MgB2 thin films by magnetron co-sputtering on (001) MgO substrates
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We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450{deg}C and 750{deg}C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting thin films. We achieved a critical onset temperature of 27.1K for a film thickness of 30nm. The crystal structures were measured by x-ray diffraction.
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We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the pa
rallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.
A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influ
ence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been scrutinized. We find that the quality of the films is less sensitive to the deposition temperature in the overdoped region than that in the underdoped region. In the phase diagram of Tc(x), the superconducting dome indicates that the optimally doping level is at the point x=0.105 with the transition temperature Tc0 = 26.5 K. Further more, both the disappearance of the upturn in the $rho_{xx}$(T) curve at low temperature under H=10 T and the positive differential Hall coefficient, $R_H=d rho_{xy}/dH$, are observed around x = 0.15, implying a possible rearrangement of Fermi surface at this doping level.
We report the effect of annealing on the superconductivity of MgB2 thin films as functions of the postannealing temperature in the range from 700 C to 950 C and of the postannealing time in the range from 30 min to 120 min. On annealing at 900 C for
30 min, we obtained the best-quality MgB2 films with a transition temperature of 39 K and a critical current density of ~ 10^7 A/cm^2. Using the scanning electron microscopy, we also investigated the film growth mechanism. The samples annealed at higher temperatures showed the larger grain sizes, well-aligned crystal structures with preferential orientations along the c-axis, and smooth surface morphologies. However, a longer annealing time prevented the alignment of grains and reduced the superconductivity, indicating a strong interfacial reaction between the substrate and the MgB2 film.
We address the effect of MgO impurity on the superconducting properties of MgB2. The synthesis of MgB2 is very crucial because of sensitivity of Mg to oxidation which may lead to MgO as a secondary phase. Rietveld refinement was performed to determin
e the quantitative volume fraction of MgO in the samples synthesized by two different techniques. Both the samples were subjected to magnetization measurements under dc and ac applied magnetic fields and the observed results were compared as a function of temperature. Paramagnetic Meissner effect has been observed in a sample of MgB2 having more amount of MgO (with Tc = 37.1K) whereas the pure sample MgB2 having minor quantity of MgO shows diamagnetic Meissner effect with Tc = 38.8K. M-H measurements at 10K reveal a slight difference in irreversibility field which is due to MgO impurity along with wide transition observed from ac magnetic susceptibility measurements. The magnetotransport measurements R(T)H using RN = 90%, 50% and 10% criterion on pure sample of MgB2 has been used to determine the upper critical field whereas the sample having large quantity of MgO does not allow these measurements due to its high resistance.
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