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تسجيل مستخدم جديدLarge capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces
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Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both superconducts and displays indications of hysteretic magnetoresistance. An essential step for device applications is establishing the ability to vary the electronic conductivity of the electron system by means of a gate. We have fabricated metallic top gates above a conductive interface to vary the electron density at the interface. By monitoring capacitance and electric field penetration, we are able to tune the charge carrier density and establish that we can completely deplete the metallic interface with small voltages. Moreover, at low carrier densities, the capacitance is significantly enhanced beyond the geometric capacitance for the structure. In the same low density region, the metallic interface overscreens an external electric field. We attribute these observations to a negative compressibility of the electronic system at the interface. Similar phenomena have been observed previously in semiconducting two-dimensional electronic systems. The observed compressibility result is consistent with the interface containing a system of mobile electrons in two dimensions.
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We investigate the effects of two electronic bands at the negative electronic compressibility (NEC) in a two-dimensional electron gas (2DEG). We use a simple homogeneous model with Coulombic interactions and first-order multi-band coupling to examine
the role of effective mass and relative permittivity in relation to the critical carrier density, where compressibility turns negative. We demonstrate that the population of a second band, along with the presence of inter-band coupling, can dramatically change the cross-over carrier density. Given the difficulty in determining and confirming multi-band electronic systems, this model provides a potential method for identifying multi-band electronic systems using precise bulk electronic properties measurements. To help illustrate this method, we apply our results to the observed NEC in the 2D electron gas at the interface of LaAlO$_3$/SrTiO$_3$ (LAO/STO) and determine that, for the known parameters of LAO/STO, the system is likely a realization of a two-band 2D electron gas. Furthermore, we provide general limits on the inter-band coupling with respect to the electronic band population.
Multiple experiments have observed a sharp transition in the band structure of LaAlO$_3$/SrTiO$_3$ (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and multiple o
ccupied bands at high density, is remarkable for its abruptness. In this work, we propose a mechanism by which such a transition might happen. We show via numerical modeling that the simultaneous coupling of the dielectric polarization to the interfacial strain (electrostrictive coupling) and strain gradient (flexoelectric coupling) generates a thin polarized layer whose direction reverses at a critical density. The Lifshitz transition occurs concomitantly with the polarization reversal and is first-order at $T=0$. A secondary Lifshitz transition, in which electrons spread out into semiclassical tails, occurs at a higher density.
A number of recent studies indicate that the charge conduction of the LaAlO$_3$/SrTiO$_3$ interface at low temperature is confined to filaments which are linked to structural domain walls in the SrTiO$_3$ with drastic consequences for example for the
temperature dependence of local transport properties. We demonstrate that as a consequences of this current carrying filaments on the nano-scale the magnetotransport properties of the interface are highly anisotropic. Our magnetoresistance measurements reveal that the magnetoresistance in different nanostructures ($<500nm$) is random in magnitude and sign, respectively. Warming up nanostructures above the structural phase transition temperature (105K) results in the significant change in MR. Even a sign change of the magnetoresistance is possible. The results suggest that domain walls that are differently oriented with respect to the surface exhibit different respective magnetoresistance and the total magnetoresistance is a result of a random domain wall pattern formed during the structural phase transition in the SrTiO$_3$ at cool down.
Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3
$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $geq 20$ unit cells. The $sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable
transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the critical thickness for conduction at this interface. This extremely thin dielectric allows a very efficient charge modulation of ${sim}3.2times10^{13}$ cm$^{-2}$ within a gate-voltage window of $pm1$ V, as extracted from capacitance-voltage measurements. These also reveal a large stray capacitance between gate and source, presenting a complication for nanoscale device operation. Despite the small LaAlO$_3$ thickness, we observe a negligible gate leakage current, which we ascribe to the extension of the conducting states into the SrTiO$_3$ substrate.
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