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تسجيل مستخدم جديدScalable ion traps for quantum information processing
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We report on the design, fabrication, and preliminary testing of a 150 zone array built in a `surface-electrode geometry microfabricated on a single substrate. We demonstrate transport of atomic ions between legs of a `Y-type junction and measure the in-situ heating rates for the ions. The trap design demonstrates use of a basic component design library that can be quickly assembled to form structures optimized for a particular experiment.
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Large-scale quantum information processors must be able to transport and maintain quantum information, and repeatedly perform logical operations. Here we demonstrate a combination of all the fundamental elements required to perform scalable quantum c
omputing using qubits stored in the internal states of trapped atomic ions. We quantify the repeatability of a multi-qubit operation, observing no loss of performance despite qubit transport over macroscopic distances. Key to these results is the use of different pairs of beryllium ion hyperfine states for robust qubit storage, readout and gates, and simultaneous trapping of magnesium re-cooling ions along with the qubit ions.
A scalable, multiplexed ion trap for quantum information processing is fabricated and tested. The trap design and fabrication process are optimized for scalability to small trap size and large numbers of interconnected traps, and for integration of c
ontrol electronics and optics. Multiple traps with similar designs are tested with Cd+, Mg+, and Sr+ ions at room temperature and with Sr+ at 6 K, with respective ion lifetimes of 90 s, 300 +/- 30 s, 56 +/- 6 s, and 4.5 +/- 1.1 hours. The motional heating rate for Mg+ at room temperature and a trap frequency of 1.6 MHz is measured to be 7 +/- 3 quanta per millisecond. For Sr+ at 6 K and 540 kHz the heating rate is measured to be 220 +/- 30 quanta per second.
We demonstrate confinement of individual atomic ions in a radio-frequency Paul trap with a novel geometry where the electrodes are located in a single plane and the ions confined above this plane. This device is realized with a relatively simple fabr
ication procedure and has important implications for quantum state manipulation and quantum information processing using large numbers of ions. We confine laser-cooled Mg-24 ions approximately 40 micrometer above planar gold electrodes. We measure the ions motional frequencies and compare them to simulations. From measurements of the escape time of ions from the trap, we also determine a heating rate of approximately five motional quanta per millisecond for a trap frequency of 5.3 MHz.
We demonstrate a SWAP gate between laser-cooled ions in a segmented microtrap via fast physical swapping of the ion positions. This operation is used in conjunction with qubit initialization, manipulation and readout, and with other types of shuttlin
g operations such as linear transport and crystal separation and merging. Combining these operations, we perform quantum process tomography of the SWAP gate, obtaining a mean process fidelity of 99.5(5)%. The swap operation is demonstrated with motional excitations below 0.05(1)~quanta for all six collective modes of a two-ion crystal, for a process duration of 42~$mu$s. Extending these techniques to three ions, we reverse the order of a three-ion crystal and reconstruct the truth table for this operation, resulting in a mean process fidelity of 99.96(13)% in the logical basis.
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry desig
n with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing.
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