ﻻ يوجد ملخص باللغة العربية
We have investigated the effect of unidirectional periodic potential modulation on the fractional quantum Hall (FQH) states located within the filling factor range $1< u<2$. We find that odd-numerator FQH states are strongly suppressed, while the even-numerator ones are less affected or even enhanced, by the introduction of the modulation. In the picture of the composite fermions (CFs), the behaviors are equivalent to the suppression of the spin splitting of the CFs by the modulation. We discuss the origin of the suppression and the possible modulation-induced phase transition from the FQH state to the stripe state.
We have investigated the effect of unidirectional periodic potential modulation on the fractional quantum Hall (FQH) state at filling factors nu=5/3 and 4/3. For large enough modulation amplitude, we find that the resistivity minimum at nu=5/3 gives
Motivated by the recently discovered microwave-induced ``zero-resistance states in two-dimensional electron systems, we study the microwave photoconductivity of a two-dimensional electron gas (2DEG) subject to a unidirectional static periodic potenti
We have experimentally identified fractional quasiparticle creation in a tunneling process through a local fractional quantum Hall (FQH) state. The local FQH state is prepared in a low-density region near a quantum point contact (QPC) in an integer q
We compare the energy gap of the u=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage a