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Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce quiet devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.
We describe and analyze in detail our recent theoretical proposal for the realization and manipulation of anyons in a weakly interacting system consisting of a two-dimensional electron gas in the integer quantum Hall regime adjacent to a type-II supe
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combin
While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have fou
The anti-ferromagnetic coupling of a magnetic impurity carrying a spin with the conduction electrons spins of a host metal is the basic mechanism responsible for the increase of the resistance of an alloy such as Cu${}_{0.998}$Fe${}_{0.002}$ at low t
We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis e