اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدEvidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field
397
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor.
قيم البحث
اقرأ أيضاً
We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but also for d
etection. Our method can detect arbitrary Mx and My component without an external magnetic field, which is useful for fast characterization of type-X, type-Y, and type-XY SOT magnetization switching. Our SOT detection scheme can be utilized not only for fast characterization of SOT switching in bilayers, but also for electrical detection of in-plane magnetic domains in race-track memory.
Intrinsic magnetoelectric coupling describes the interaction between magnetic and electric polarization through an inherent microscopic mechanism in a single phase material. This phenomenon has the potential to control the magnetic state of a materia
l with an electric field, an enticing prospect for device engineering. We demonstrate giant magnetoelectric cross-field control in a single phase rare earth titanate film. In bulk form, EuTiO3 is antiferromagnetic. However, both anti and ferromagnetic interactions coexist between different nearest neighbor europium ions. In thin epitaxial films, strain can be used to alter the relative strength of the magnetic exchange constants. Here, we not only show that moderate biaxial compression precipitates local magnetic competition, but also demonstrate that the application of an electric field at this strain state, switches the magnetic ground state. Using first principles density functional theory, we resolve the underlying microscopic mechanism resulting in the EuTiO3 G-type magnetic structure and illustrate how it is responsible for the giant cross-field magnetoelectric effect.
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduc
ed to tune the magnitude of effective damping-like and field-like torques and further to electrically control magnetization switching. Symmetrical and asymmetrical control over the critical switching current by the bias current with opposite polarities is both realized in Pt/Co/MgO and $alpha$-Ta/CoFeB/MgO systems, respectively. This research not only identifies the influences of field-like and damping-like torques on switching process but also demonstrates an electrical method to control it.
Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second harmonic
Hall voltage has been utilized as one of the methods for estimating spin Hall angle, which is attributed to the magnetization oscillation by SOT. Here, we argue the second harmonic Hall voltage in magnetic/nonmagnetic topological insulator (TI) heterostructures, Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{2-x}$Te$_3$/(Bi$_{1-y}$Sb$_y$)$_2$Te$_3$. From the angular, temperature and magnetic field dependence, it is unambiguously shown that the large second harmonic Hall voltage in TI heterostructures is governed not by SOT but mainly by asymmetric magnon scattering mechanism without magnetization oscillation. Thus, this method does not allow an accurate estimation of spin Hall angle when magnons largely contribute to electron scattering. Instead, the SOT contribution in a TI heterostructure is exemplified by current pulse induced non-volatile magnetization switching, which is realized with a current density of $sim 2.5 times 10^{10} mathrm{A/m}^2$, showing its potential as spintronic materials.
The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material
, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
