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Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

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 نشر من قبل Alexios Beveratos
 تاريخ النشر 2008
  مجال البحث فيزياء
والبحث باللغة English
 تأليف Richard Hostein




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The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.



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