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Using scanning tunneling microscopy (STM) and Fourier Transform STM (FT-STM), we have studied a point defect in an epitaxial graphene sample grown on silicon carbide substrate. This analysis allows us to extract the quasiparticle energy dispersion, and to give a first experimental proof of the validity of Fermi liquid theory in graphene for a wide range of energies from -800 meV to +800 meV. We also find evidence of a strong threefold anisotropy in the standing waves generated by the defect. We discuss possible relations between this anisotropy, the chirality of the electrons, and the asymmetry between graphenes two sublattices. All experimental measurements are compared and related to theoretical T-matrix calculations.
It is generally believed that a point defect in graphene gives rise to an impurity state at zero energy and causes a sharp peak in the local density of states near the defect site. We revisit the defect problem in graphene and find the general consen
Intrinsic defects give rise to scattering processes governing the transport properties of mesoscopic systems. We investigate analytically and numerically the local density of states in Bernal stacking bilayer graphene with a point defect. With Bernal
Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalentl
We investigate the magnetotransport properties of quasi-free standing epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization in Ar, followed by H$_2$ intercalation. At the charge neutrality point the longitudinal resistance s
The magnetization dynamics induced by standing elastic waves excited in a thin ferromagnetic film is described with the aid of micromagnetic simulations taking into account the magnetoelastic coupling between spins and lattice strains. The simulation