اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدGround-state of graphene in the presence of random charged impurities
160
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensional carrier density distribution on the external gate bias, the impurity density, and the impurity location. We find that the interplay between disorder and interaction is strong, particularly at lower impurity densities. We show that for the currently available typical graphene samples, inhomogeneity dominates graphene physics at low ($lesssim 10^{12}$ cm$^{-2}$) carrier density with the density fluctuations becoming larger than the average density.
قيم البحث
اقرأ أيضاً
We study the effects of the long-range disorder potential and warping on the conductivity and mobility of graphene ribbons using the Landauer formalism and the tight-binding p-orbital Hamiltonian. We demonstrate that as the length of the structure in
creases the system undergoes a transition from the ballistic to the diffusive regime. This is reflected in the calculated electron density dependencies of the conductivity and the mobility. In particular, we show that the mobility of graphene ribbons varies as mu(n) n^(-lambda), with 0<lambda<0.5. The exponent lambda depends on the length of the system with lambda=0.5 corresponding to short structures in the ballistic regime, whereas the diffusive regime lambda=0 (when the mobility is independent on the electron density) is reached for sufficiently long structures. Our results can be used for the interpretation of experimental data when the value of lambda can be used to distinguish the transport regime of the system (i.e. ballistic, quasi-ballistic or diffusive). Based on our findings we discuss available experimental results.
We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier con
centration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering.
We extend the electrodynamics of two dimensional electron gases to account for the extrinsic spin Hall effect (SHE). The theory is applied to doped graphene decorated with a random distribution of absorbates that induce spin-orbit coupling (SOC) by p
roximity. The formalism extends previous semiclassical treatments of the SHE to the non-local dynamical regime. Within a particle-number conserving approximation, we compute the conductivity, dielectric function, and spin Hall angle in the small frequency and wave vector limit. The spin Hall angle is found to decrease with frequency and wave number, but it remains comparable to its zero-frequency value around the frequency corresponding to the Drude peak. The plasmon dispersion and linewidth are also obtained. The extrinsic SHE affects the plasmon dispersion in the long wavelength limit, but not at large values of the wave number. This result suggests an explanation for the rather similar plasmonic response measured in exfoliated graphene, which does not exhibit the SHE, and graphene grown by chemical vapor deposition, for which a large SHE has been recently reported. Our theory also lays the foundation for future experimental searches of SOC effects in the electrodynamic response of two-dimensional electron gases with SOC disorder.
Experimentally produced graphene sheets exhibit a wide range of mobility values. Both extrinsic charged impurities and intrinsic ripples (corrugations) have been suggested to induce long-range disorder in graphene and could be a candidate for the dom
inant source of disorder. Here, using large-scale molecular dynamics and quantum transport simulations, we find that the hopping disorder and the gauge and scalar potentials induced by the ripples are short-ranged, in strong contrast with predictions by continuous models, and the transport fingerprints of the ripple disorder are very different from those of charged impurities. We conclude that charged impurities are the dominant source of disorder in most graphene samples, whereas scattering by ripples is mainly relevant in the high carrier density limit of ultraclean graphene samples (with a charged impurity concentration < 10 ppm) at room and higher temperatures.
We consider an impurity with a spin degree of freedom coupled to a finite reservoir of non-interacting electrons, a system which may be realized by either a true impurity in a metallic nano-particle or a small quantum dot coupled to a large one. We s
how how the physics of such a spin impurity is revealed in the many-body spectrum of the entire finite-size system; in particular, the evolution of the spectrum with the strength of the impurity-reservoir coupling reflects the fundamental many-body correlations present. Explicit calculation in the strong and weak coupling limits shows that the spectrum and its evolution are sensitive to the nature of the impurity and the parity of electrons in the reservoir. The effect of the finite size spectrum on two experimental observables is considered. First, we propose an experimental setup in which the spectrum may be conveniently measured using tunneling spectroscopy. A rate equation calculation of the differential conductance suggests how the many-body spectral features may be observed. Second, the finite-temperature magnetic susceptibility is presented, both the impurity susceptibility and the local susceptibility. Extensive quantum Monte-Carlo calculations show that the local susceptibility deviates from its bulk scaling form. Nevertheless, for special assumptions about the reservoir -- the clean Kondo box model -- we demonstrate that finite-size scaling is recovered. Explicit numerical evaluations of these scaling functions are given, both for even and odd parity and for the canonical and grand-canonical ensembles.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
