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تسجيل مستخدم جديدShot Noise in Graphene
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We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.
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We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F approx 0.4$, nearly independent of the charge density. Our sh
ot noise results are consistent with theoretical models for disordered graphene ribbons with a dimensionless scattering strength $K_0 approx 10$ corresponding to rather strong disorder. Close to charge neutrality, an increase in $F$ up to $sim 0.7$ is found, which indicates the presence of a dominant Coulomb gap possibly due to a single quantum dot in the transport gap.
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e pairs in the conductor. The physics of photon-assisted shot noise has been thoroughly investigated at microwave frequencies up to 20 GHz, and its robustness suggests that it could be extended to the Terahertz (THz) range. Here, we present measurements of the quantum shot noise generated in a graphene nanoribbon subjected to a THz radiation. Our results show signatures of photon-assisted shot noise, further demonstrating that hallmark time-dependant quantum transport phenomena can be transposed to the THz range.
Transport properties of graphene - superconductor junction has been studied extensively to understand the interplay of the relativistic Dirac quasiparticles and superconductivity. Though shot noise measurements in graphene has been performed to reali
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