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A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trap
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by sim
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge
Planar silicon pixel sensors with modified n$^+$-implantation shapes based on the IBL pixel sensor were designed in Dortmund. The sensors with a pixel size of $250,mu$m $times$ $50,mu$m are produced in n$^+$-in-n sensor technology. The charge colle