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The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynamical critical exponent z. The phase diagram and the critical resistance have been studied as a function of film thickness and magnetic field. The results are discussed in terms of bosonic models of the superconductor-insulator transition, as well as the percolation models which predict finite dissipation at T=0.
The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on the order
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean pa
The superconducting-insulator transition is simulated in disordered networks of Josephson junctions with thermally activated Arrhenius-like resistive shunt. By solving the conductance matrix of the network, the transition is reproduced in different e
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the dirty boson model, we have found a critical exponents pr