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In a recent letter M. Lilly et al [PRL 82, 394 (1999)] have shown that a highly anisotropic state can arise in certain two dimensional electron systems. In the large square samples studied, resistances measured in the two perpendicular directions are found to have a ratio that may be 60 or larger at low temperature and at certain magnetic fields. In Hall bar measurements, the anisotropy ratio is found to be much smaller (roughly 5). In this comment we resolve this discrepancy by noting that the anisotropy of the underlying sheet resistivities is correctly represented by Hall bar resistance measurements but shows up exponentially enhanced in resistance measurements on square samples due to simple geometric effects. We note, however, that the origin of this underlying resistivity anisotropy remains unknown, and is not addressed here.
We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by the presenc
Developments in the physics of 2D electron systems during the last decade have revealed a new class of nonequilibrium phenomena in the presence of a moderately strong magnetic field. The hallmark of these phenomena is magnetoresistance oscillations g
Recent experiments on Coulomb drag in the quantum Hall regime have yielded a number of surprises. The most striking observations are that the Coulomb drag can become negative in high Landau levels and that its temperature dependence is non-monotonous
We investigate the coupling between Rydberg states of electrons trapped on a liquid Helium surface and Landau levels induced by a perpendicular magnetic field. We show that this realises a prototype quantum system equivalent to an atom in a cavity, w
The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The pres