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We investigate the magneto-conductance (MC) anisotropy in the variable range hopping regime, caused by quantum interference effects in three dimensions. When no spin-orbit scattering is included, there is an increase in the localization length (as in two dimensions), producing a large positive MC. By contrast, with spin-orbit scattering present, there is no change in the localization length, and only a small increase in the overall tunneling amplitude. The numerical data for small magnetic fields $B$, and hopping lengths $t$, can be collapsed by using scaling variables $B_perp t^{3/2}$, and $B_parallel t$ in the perpendicular and parallel field orientations respectively. This is in agreement with the flux through a `cigar--shaped region with a diffusive transverse dimension proportional to $sqrt{t}$. If a single hop dominates the conductivity of the sample, this leads to a characteristic orientational `finger print for the MC anisotropy. However, we estimate that many hops contribute to conductivity of typical samples, and thus averaging over critical hop orientations renders the bulk sample isotropic, as seen experimentally. Anisotropy appears for thin films, when the length of the hop is comparable to the thickness. The hops are then restricted to align with the sample plane, leading to different MC behaviors parallel and perpendicular to it, even after averaging over many hops. We predict the variations of such anisotropy with both the hop size and the magnetic field strength. An orientational bias produced by strong electric fields will also lead to MC anisotropy.
We predict the universal power law dependence of localization length on magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative mag
The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed, though the
We have studied the AC response of a hopping model in the variable range hopping regime by dynamical Monte Carlo simulations. We find that the conductivity as function of frequency follows a universal scaling law. We also compare the numerical result
Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified o
We show that the spin chain/ladder compound La_3Sr_3Ca_8Cu_24O_41 is an insulator with hopping transport along the chains. In the temperature range 35 - 280 K, DC conductivity sigma_{DC}(T) follows Motts law of variable-range hopping conduction; the