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We present easily reproducible experimental conditions giving long electron spin relaxation and dephasing times at low temperature in a quantum well. The proposed system consists in an electron localized by a donor potential, and immerged in a quantum well in order to improve its localization with respect to donor in bulk. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation and dephasing times of electrons localized on donors placed in the middle of a 80A CdTe quantum well, and we have obtained 15ns and 18ns, respectively, which are almost two orders of magnitude longer than the free electron spin relaxation and dephasing times obtained previously in a similar CdTe quantum well (J. Tribollet et al. PRB 68, 235316 (2003)).
We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times ar
A fully microscopic theory of electron spin relaxation by the Dyakonov-Perel type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch equations for a
Spin-dependent photon echoes in combination with pump-probe Kerr rotation are used to study the microscopic electron spin transport in a CdTe/(Cd,Mg)Te quantum well in the hopping regime. We demonstrate that independent of the particular spin relaxat
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in a
We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor (nu) with ga