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تسجيل مستخدم جديدElectron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots
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تأليف
E. B. Olshanetsky
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In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.
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