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We discuss the influence of the magneto-coulomb effect (MCE) on the magnetoconductance of spin valve devices. We show that MCE can induce magnetoconductances of several per cents or more, dependent on the strength of the coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by MCE from those due to spin accumulation in spin valve devices.
Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polari
Hydrogen adsorbates in graphene are interesting as they are not only strong Coulomb scatterers but they also induce a change in orbital hybridization of the carbon network from sp^2 into sp^3. This change increases the spin-orbit coupling and is expe
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-
The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes ($sim$1 %
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear chara