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Epitaxial La3/4Ca1/4MnO3/MgO(100) (LCMO) thin films show unusual rhombohedral (R-3c) structure with a new perovskite superstructure due to unique ordering of La and Ca at the A-site positions. Very sharp insulator-metal and para-ferromagnetic phase transitions at temperatures up to TMI ~ TC=295 K were observed. The ordered films were electronically homogeneous down to 1 nm scale as revealed by scanning tunnelling microscopy/spectroscopy. In contrast, orthorhombic and A-site disordered LCMO demonstrate broadened phase transitions as well as mesoscopic phase separation for T<<TC. The unique La/Ca ordering suppresses cation mismatch stress within one super-cell, a~1.55 nm, enhancing electronic homogeneity. Phase separation scenario seems not to be a unique mechanism for CMR as very large CMR=500 % was also observed in A-site ordered films.
In doped manganites, the strong electron-phonon coupling due to the Jahn-Teller effect localizes the conduction-band electrons as polarons. This results in polarons are carriers responsible for transport and ferromagnetic ordering rather than the bar
We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bu
Low as well as high-temperature electron and x-ray diffraction studies have been carried out on a rare-earth free B-site disordered electron-doped manganite SrMn0.875.Mo0.125O3-{delta} in the temperature range of 83K to 637K. These studies reveal the
Structural study of orbital-ordered manganite thin films has been conducted using synchrotron radiation, and a ground state electronic phase diagram is made. The lattice parameters of four manganite thin films, Nd0.5Sr0.5MnO3 (NSMO) or Pr0.5Sr0.5MnO3
We have performed x-ray linear and circular magnetic dichroism experiments at the Mn L2,3-edge of the La0.7Sr0.3MnO3 ultra thin films. Our measurements show that the antiferromagnetic (AF) insulating phase is stabilized by the interfacial rearrangeme