اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدOrbital occupation, atomic moments and magnetic ordering at interfaces of manganite thin films
88
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We have performed x-ray linear and circular magnetic dichroism experiments at the Mn L2,3-edge of the La0.7Sr0.3MnO3 ultra thin films. Our measurements show that the antiferromagnetic (AF) insulating phase is stabilized by the interfacial rearrangement of the Mn 3d orbitals, despite the relevant magnetostriction anisotropic effect on the double-exchange ferromagnetic (FM) metallic phase. As a consequence, the Mn atomic magnetic moment orientation and how it reacts to strain differ in the FM and AF phases. In some cases a FM insulating (FMI) phase adds to the AF and FM. Its peculiar magnetic properties include in-plane magnetic anisotropy and partial release of the orbital moment quenching. Nevertheless the FMI phase appears little coupled to the other ones.
قيم البحث
اقرأ أيضاً
Structural study of orbital-ordered manganite thin films has been conducted using synchrotron radiation, and a ground state electronic phase diagram is made. The lattice parameters of four manganite thin films, Nd0.5Sr0.5MnO3 (NSMO) or Pr0.5Sr0.5MnO3
(PSMO) on (011) surfaces of SrTiO3 (STO) or [(LaAlO3){0.3}(SrAl0.5Ta0.5O3){0.7}] (LSAT), were measured as a function of temperature. The result shows, as expected based on previous knowledge of bulk materials, that the films resistivity is closely related to their structures. Observed superlattice reflections indicate that NSMO thin films have an antiferro-orbital-ordered phase as their low-temperature phase while PSMO film on LSAT has a ferro-orbital-ordered phase, and that on STO has no orbital-ordered phase. A metallic ground state was observed only in films having a narrow region of A-site ion radius, while larger ions favor ferro-orbital-ordered structure and smaller ions stabilize antiferro-orbital-ordered structure. The key to the orbital-ordering transition in (011) film is found to be the in-plane displacement along [0-1 1] direction.
Electronic properties of transition metal oxides at interfaces are influenced by strain, electric polarization and oxygen diffusion. Linear dichroism (LD) x-ray absorption, diffraction, transport and magnetization on thin La0.7Sr0.3MnO3 films, allow
identification of a peculiar universal interface effect. We report the LD signature of preferential 3d-eg(3z2-r2) occupation at the interface, suppressing the double exchange mechanism. This surface orbital reconstruction is opposite of that favored by residual strain and independent of dipolar fields, chemical nature of the substrate and capping.
We study the effect of uniform uniaxial strain on the ground state electronic configuration of a thin film manganite. Our model Hamiltonian includes the double-exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchan
ge. The strain arises due to the lattice mismatch between an insulating substrate and a manganite which produces a tetragonal distortion. This is included in the model via a modification of the hopping amplitude and the introduction of an energy splitting between the Mn e_g levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces.
An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film Nd$_{0.5}$Sr$_{0.5}$MnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 18
0K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A-type), and the other has a small itinerancy (CE-type), while the lattice distortions they cause are almost equal. Our x ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the electronic states of the LT phases.
Using Co-L_(2,3) and O-K x-ray absorption spectroscopy, we reveal that the charge ordering in La_(1.5)Sr_(0.5)CoO4 involves high spin (S=3/2) Co^2+ and low spin (S=0) Co^3+ ions. This provides evidence for the spin blockade phenomenon as a source for
the extremely insulating nature of the La_(2-x)Sr_(x)CoO4 series. The associated e_g^2 and e_g^0 orbital occupation accounts for the large contrast in the Co-O bond lengths, and in turn, the high charge ordering temperature. Yet, the low magnetic ordering temperature is naturally explained by the presence of the non-magnetic (S=0) Co^3+ ions. From the identification of the bands we infer that La_(1.5)Sr_(0.5)CoO4 is a narrow band material.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
