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We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin) are determined independently of the Raman spectrum, in such a way that common beliefs used for level assignments in experimental spectra can be tested. We explore the usefulness of below band gap excitation and an external magnetic field to identify charge and spin excited states of a collective or single-particle nature.
We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature
The electronic Raman scattering (ERS) features of single-walled carbon nanotubes (SWNTs) can reveal a wealth of information about their electronic structures, but have previously been thought to appear exclusively in metallic (M-) but not in semicond
Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar irradiation. Fourier transform scanning tunneling spectroscopy
We report experimental measurements of electronic Raman scattering under resonant conditions by electrons in individual single-walled carbon nanotubes (SWNTs). The inelastic Raman scattering at low frequency range reveals a single particle excitation
We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The tr