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We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rates for six transitions are extracted. We find that these rates depend strongly on the spin and orbital states involved in the tunnel process.
In this paper we report on a tuneable few electron lateral triple quantum dot design. The quantum dot potentials are arranged in series. The device is aimed at studies of triple quantum dot properties where knowing the exact number of electrons is im
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correla
A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot couple